Study of neutron irradiation effects in Depleted CMOS detector structures
نویسندگان
چکیده
Abstract In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates different initial resistivities ranging from 0.5 to 3 kΩcm are presented. Samples were irradiated reactor neutrons up a fluence 2·10 15 n eq /cm 2 . The depletion depth was measured Edge-TCT. effective space charge concentration N eff estimated dependence bias voltage studied as function neutron fluence. changes acceptor agreement other silicon. A long term accelerated annealing study detector current 1280 minutes at 60°C made. It found that reverse biased behave expected for
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ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2022
ISSN: ['1748-0221']
DOI: https://doi.org/10.1088/1748-0221/17/03/p03030